在[110]衬底上对称的45nm PMOS具有优异的S/D扩展分布和迁移率增强

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345410

J. Hwang, J. Ho, Y. Liu, J.J. Shen, W. Chen, D. Chen, W. Liao, Y. S. Hsieh, W. Lin, C. Hsu, H. Lin, M.F. Lu, A. Kuo, S. Huang-Lu, H. Tang, D. Chen, W. Shiau, K. Liao, S. Sun

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引用次数: 9

摘要

45 nm PMOS器件首次出现在4重对称区[110]的表面衬底上，在S/D扩展区具有良好的扩散控制。与传统(100)基片上的器件相比，观察到30%的驱动电流增强。对电荷注入应力引起的栅氧化界面产生的阻力提高了2倍。在[110]表面基板上也观察到改善的1/f噪声特性，特别是当器件工作在线性区域时。

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Symmetrical 45nm PMOS on [110] substrate with excellent S/D extension distribution and mobility enhancement

For the first time, 45 nm PMOS devices on the only 4-fold symmetry zone of [110] surface substrates were demonstrated with excellent diffusion control in the S/D extension region. A 30% drive current enhancement was observed compared to devices on conventional (100) substrates with <110> channel. Resistance to gate oxide interface generation induced by charge injection stress is increased by 2 times. Improved 1/f noise characteristics were also observed on [110] surface substrates, especially when devices operate at the linear region.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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