微波处理对Au-TiBx-Al-Ti-n-GaN欧姆触点性能的影响

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676498

A. Belyaev, N. S. Boltovets, V. N. Ivanov, R. Konakova, E. Kolyadina, Y. Kudryk, L. Matveeva, V. V. Milenin, V.M. Sheremet

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引用次数: 1

摘要

研究了微波辐照(频率为2.45 GHz，辐照度为~1.5 W/cm2) 2-100 s对Au-TiBx-Al-Ti-n-GaN接触结构特性的影响。发现了接触电阻率变化与晶圆曲率之间的相关性。这表明本征应力对接触电阻率有相当大的影响。欧姆接触电阻值的相对扩散随辐照时间的延长而减小。这可能表明微波辐照增强了局部本征应力的均匀化。

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Effect of microwave treatment on the properties of Au-TiBx-Al-Ti-n-GaN ohmic contacts

We studied the effect of microwave irradiation (frequency of 2.45 GHz, irradiance of ~1.5 W/cm2) for 2-100 s on the characteristics of Au-TiBx-Al-Ti-n-GaN contact structures. A correlation between the contact resistivity changes and wafer curvature was found. This indicates considerable effect of intrinsic stresses on contact resistivity. Relative spread of ohmic contact resistance values decreases with irradiation time. This may indicate local intrinsic stresses homogenization enhanced by microwave irradiation.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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