离子注入和电退火技术在修整硅MZIs和促进一次性可编程光子电路中的应用

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853925

Xia Chen, M. Milosevic, G. Reed, S. Saito, Xingzhao Yan, Xingshi Yu

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引用次数: 1

摘要

我们使用锗离子注入和电退火，通过TiN微加热器来修整硅mzi。结果表明，可以永久、局部、快速地将输出功率从跌落口切换到直通口。

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Ion Implantation and Electrical Annealing for Trimming Silicon MZIs and Facilitating One-Time Programmable Photonic Circuits

We use Ge ion implantation and electrical annealing, via TiN micro-heater, to trim silicon MZIs. The results show the possibility for switching the output power from the drop port to through port permanently, locally and rapidly.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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