S. Humad, R. Abdolvand, G. K. Ho, Gianluca Piazza, Farrokh Ayazi
{"title":"高频微机械硅基压电块谐振器","authors":"S. Humad, R. Abdolvand, G. K. Ho, Gianluca Piazza, Farrokh Ayazi","doi":"10.1109/IEDM.2003.1269437","DOIUrl":null,"url":null,"abstract":"This paper reports on the design, implementation and characterization of high-frequency single crystal silicon (SCS) block resonators with piezoelectric electromechanical transducers. The resonators are fabricated on 4/spl mu/m thick SOI substrates and use sputtered ZnO as the piezo material. The centrally-supported blocks can operate in their first and higher order length extensional bulk modes with high quality factor (Q). The highest measured frequency is currently at 210 MHz with a Q of 4100 under vacuum, and the highest Q measured is 11,600 at 17 MHz. The uncompensated temperature coefficient of frequency (TCF) was measured to be -40ppm//spl deg/C and linear over the temperature range of 20-100/spl deg/C.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"73","resultStr":"{\"title\":\"High frequency micromechanical piezo-on-silicon block resonators\",\"authors\":\"S. Humad, R. Abdolvand, G. K. Ho, Gianluca Piazza, Farrokh Ayazi\",\"doi\":\"10.1109/IEDM.2003.1269437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the design, implementation and characterization of high-frequency single crystal silicon (SCS) block resonators with piezoelectric electromechanical transducers. The resonators are fabricated on 4/spl mu/m thick SOI substrates and use sputtered ZnO as the piezo material. The centrally-supported blocks can operate in their first and higher order length extensional bulk modes with high quality factor (Q). The highest measured frequency is currently at 210 MHz with a Q of 4100 under vacuum, and the highest Q measured is 11,600 at 17 MHz. The uncompensated temperature coefficient of frequency (TCF) was measured to be -40ppm//spl deg/C and linear over the temperature range of 20-100/spl deg/C.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"73\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency micromechanical piezo-on-silicon block resonators
This paper reports on the design, implementation and characterization of high-frequency single crystal silicon (SCS) block resonators with piezoelectric electromechanical transducers. The resonators are fabricated on 4/spl mu/m thick SOI substrates and use sputtered ZnO as the piezo material. The centrally-supported blocks can operate in their first and higher order length extensional bulk modes with high quality factor (Q). The highest measured frequency is currently at 210 MHz with a Q of 4100 under vacuum, and the highest Q measured is 11,600 at 17 MHz. The uncompensated temperature coefficient of frequency (TCF) was measured to be -40ppm//spl deg/C and linear over the temperature range of 20-100/spl deg/C.