高频微机械硅基压电块谐振器

S. Humad, R. Abdolvand, G. K. Ho, Gianluca Piazza, Farrokh Ayazi
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引用次数: 73

摘要

本文报道了带压电机电换能器的高频单晶硅块谐振器的设计、实现和性能表征。谐振器是在4/spl μ m厚的SOI衬底上制作的,使用溅射ZnO作为压电材料。中央支撑块可以以高质量因子(Q)在一阶和高阶长度扩展块模式下工作。目前在真空下测量到的最高频率为210 MHz, Q为4100,在17 MHz时测量到的最高Q为11,600。测得无补偿频率温度系数(TCF)为-40ppm//spl℃,在20-100/spl℃范围内呈线性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High frequency micromechanical piezo-on-silicon block resonators
This paper reports on the design, implementation and characterization of high-frequency single crystal silicon (SCS) block resonators with piezoelectric electromechanical transducers. The resonators are fabricated on 4/spl mu/m thick SOI substrates and use sputtered ZnO as the piezo material. The centrally-supported blocks can operate in their first and higher order length extensional bulk modes with high quality factor (Q). The highest measured frequency is currently at 210 MHz with a Q of 4100 under vacuum, and the highest Q measured is 11,600 at 17 MHz. The uncompensated temperature coefficient of frequency (TCF) was measured to be -40ppm//spl deg/C and linear over the temperature range of 20-100/spl deg/C.
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