基于纳米管的高集成度垂直纳米器件

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI:10.1109/NANOEL.2006.1609695

J. Jang, S. Cha, Y. Choi, D. Kang, T. Butler, D. Hasko, J.E. Jung, J.M. Kim, G. Amaratunga

{"title":"基于纳米管的高集成度垂直纳米器件","authors":"J. Jang, S. Cha, Y. Choi, D. Kang, T. Butler, D. Hasko, J.E. Jung, J.M. Kim, G. Amaratunga","doi":"10.1109/NANOEL.2006.1609695","DOIUrl":null,"url":null,"abstract":"Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Nanotube based Vertical Nano-devices for High Integration Density\",\"authors\":\"J. Jang, S. Cha, Y. Choi, D. Kang, T. Butler, D. Hasko, J.E. Jung, J.M. Kim, G. Amaratunga\",\"doi\":\"10.1109/NANOEL.2006.1609695\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.\",\"PeriodicalId\":220722,\"journal\":{\"name\":\"2006 IEEE Conference on Emerging Technologies - Nanoelectronics\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Conference on Emerging Technologies - Nanoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANOEL.2006.1609695\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANOEL.2006.1609695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

基于垂直纳米管的各种纳米器件被开发出来。碳纳米管(CNTs)被用作纳米机电(NEM)开关、纳米电容器和NEM动态随机存取存储器(DRAM)的功能部件或纳米结构。纳米管独特的垂直结构使得器件具有较高的集成密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nanotube based Vertical Nano-devices for High Integration Density

Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 IEEE Conference on Emerging Technologies - Nanoelectronics

自引率

0.00%

发文量