Pan Liu, Liangtao Li, Z. Zeng, Guoqi Zhang, Pengfei Liu, Jon Qingchun Zhang, Jing Zhang
{"title":"碳化硅功率器件超声粗线键合工艺仿真与验证","authors":"Pan Liu, Liangtao Li, Z. Zeng, Guoqi Zhang, Pengfei Liu, Jon Qingchun Zhang, Jing Zhang","doi":"10.1109/ECTC32696.2021.00282","DOIUrl":null,"url":null,"abstract":"Ultrasonic wire bonding is one of the critical challenges for power semiconductor manufacturing process, especially for silicon carbide (SiC) power devices. Packaging-related strain on the dies is one of the limiting factors for SiC devices scaling towards mass-production. Furthermore, due to the high current demand for SiC power device packaging, thick bond wires are often needed, which brings major challenges for the ultrasonic wire bonding process. Thus, computational simulation methods are under development to assist the wire bonding process. This paper presents a simulation method that can quickly narrow the process window for thick bond wires on SiC power devices beforehand. A process model was created to adapt process parameters of bonding force and power. This model aims to simulate the bond deformation for a discretized bonding area. Wire deformation and equivalent plastic strain were then examined and compared. The model was further validated through experiments. Experimental validation of the wire bonding model reveals a suitable deformation of bond wires, which helps to improve thick wire bonding reliability for power electronics packaging.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultrasonic Thick Wire Bonding Process Simulation and Validation for Silicon Carbide Power Devices\",\"authors\":\"Pan Liu, Liangtao Li, Z. Zeng, Guoqi Zhang, Pengfei Liu, Jon Qingchun Zhang, Jing Zhang\",\"doi\":\"10.1109/ECTC32696.2021.00282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultrasonic wire bonding is one of the critical challenges for power semiconductor manufacturing process, especially for silicon carbide (SiC) power devices. Packaging-related strain on the dies is one of the limiting factors for SiC devices scaling towards mass-production. Furthermore, due to the high current demand for SiC power device packaging, thick bond wires are often needed, which brings major challenges for the ultrasonic wire bonding process. Thus, computational simulation methods are under development to assist the wire bonding process. This paper presents a simulation method that can quickly narrow the process window for thick bond wires on SiC power devices beforehand. A process model was created to adapt process parameters of bonding force and power. This model aims to simulate the bond deformation for a discretized bonding area. Wire deformation and equivalent plastic strain were then examined and compared. The model was further validated through experiments. Experimental validation of the wire bonding model reveals a suitable deformation of bond wires, which helps to improve thick wire bonding reliability for power electronics packaging.\",\"PeriodicalId\":351817,\"journal\":{\"name\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC32696.2021.00282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultrasonic Thick Wire Bonding Process Simulation and Validation for Silicon Carbide Power Devices
Ultrasonic wire bonding is one of the critical challenges for power semiconductor manufacturing process, especially for silicon carbide (SiC) power devices. Packaging-related strain on the dies is one of the limiting factors for SiC devices scaling towards mass-production. Furthermore, due to the high current demand for SiC power device packaging, thick bond wires are often needed, which brings major challenges for the ultrasonic wire bonding process. Thus, computational simulation methods are under development to assist the wire bonding process. This paper presents a simulation method that can quickly narrow the process window for thick bond wires on SiC power devices beforehand. A process model was created to adapt process parameters of bonding force and power. This model aims to simulate the bond deformation for a discretized bonding area. Wire deformation and equivalent plastic strain were then examined and compared. The model was further validated through experiments. Experimental validation of the wire bonding model reveals a suitable deformation of bond wires, which helps to improve thick wire bonding reliability for power electronics packaging.