Andrey Zhuravlev, K. Abgaryan, D. Bazhanov, D. Reviznikov
{"title":"忆阻元素中离子动力学的蒙特卡罗模拟","authors":"Andrey Zhuravlev, K. Abgaryan, D. Bazhanov, D. Reviznikov","doi":"10.29003/m2483.mmmsec-2021/98-101","DOIUrl":null,"url":null,"abstract":"The work is devoted to Monte Carlo modeling of the formation / destruction of oxygen vacancies and the migration of oxygen ions in oxide layers of memristive elements.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MONTE CARLO SIMULATION OF ION DYNAMICS IN MEMRISTIVE ELEMENTS\",\"authors\":\"Andrey Zhuravlev, K. Abgaryan, D. Bazhanov, D. Reviznikov\",\"doi\":\"10.29003/m2483.mmmsec-2021/98-101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work is devoted to Monte Carlo modeling of the formation / destruction of oxygen vacancies and the migration of oxygen ions in oxide layers of memristive elements.\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m2483.mmmsec-2021/98-101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m2483.mmmsec-2021/98-101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MONTE CARLO SIMULATION OF ION DYNAMICS IN MEMRISTIVE ELEMENTS
The work is devoted to Monte Carlo modeling of the formation / destruction of oxygen vacancies and the migration of oxygen ions in oxide layers of memristive elements.