忆阻元素中离子动力学的蒙特卡罗模拟

Andrey Zhuravlev, K. Abgaryan, D. Bazhanov, D. Reviznikov
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引用次数: 0

摘要

这项工作致力于对氧空位的形成/破坏和氧离子在忆阻元件氧化层中的迁移进行蒙特卡罗建模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
MONTE CARLO SIMULATION OF ION DYNAMICS IN MEMRISTIVE ELEMENTS
The work is devoted to Monte Carlo modeling of the formation / destruction of oxygen vacancies and the migration of oxygen ions in oxide layers of memristive elements.
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