无源接地MOSCAP-记忆器仿真器

2022 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) Pub Date : 2022-07-08 DOI:10.1109/CONECCT55679.2022.9865831

Rahul Kumar Gupta, M. Chaudhary, Sachin Taran, Varun Saxena

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引用次数: 0

摘要

本文提出了一种接地无源MOSCAP-忆阻器仿真器，该仿真器仅由三个mosfet和一个无偏置MOSCAP组成。早先研究人员提出了由现有块和无源元件组成的忆阻器仿真器。与现有电路相比，所提出的电路结构非常简单。该电路在Cadence Virtuoso GPDK 180nm技术上进行仿真，输入正弦和脉冲信号。该电路的工作频率可达30MHz。该电路分析了磁滞回线和电流随电压方向的变化。成功地获得了忆阻器的预期性能值，并介绍了忆阻器在滤波器中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Passive Grounded MOSCAP- Memrisor Emulator

In this paper, a grounded Passive MOSCAP-Memristor Emulator is presented consisting of only three MOSFETs and one MOSCAP without biasing. Earlier the researchers have presented memristor emulators consisting of existing blocks and passive elements. The proposed circuit's structure is very simple compared to the existing one. This circuit is simulated on Cadence Virtuoso GPDK 180nm technology with sinusoidal and pulse input signals. The operating frequency of this circuit is up to 30MHz. This circuit analyzed the hysteresis loop and variation of current according to the voltage direction. The expected figure of merits of the memristor is successfully obtained and presented the memristor application in filters.

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2022 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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