硅通孔互连技术与热预算设计

2007 International Conference on Thermal Issues in Emerging Technologies: Theory and Application Pub Date : 2007-05-21 DOI:10.1109/THETA.2007.363432

Jinwoo Jeong, Eunsung Lee, H. Kim, C. Moon, K. Chun

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引用次数: 0

摘要

对于堆叠式MEMS封装，建议采用能够承受MEMS工艺高热预算的硅通孔结构。采用掺杂硅代替金属作为通孔材料。详细阐述了系统的主要思想和设计思路。采用硅直接键合(SDB)多层叠加工艺和金属回流工艺进行通孔加工。制作了间距为40mum和50mum的通孔阵列。测量了所制通孔的电阻。硅通孔的热特性正在评估中

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Si Via Interconnection Technique with Thermal Budget Design

The silicon-through-via structure that can withstand high thermal budget of MEMS process is suggested for stacked MEMS package. The doped silicon is used as through- via material instead of metal. The key ideas and design are described in detail. SDB (silicon direct bonding) multi-stacking process and metal reflow technique are used for through-via fabrication. Through-via arrays with 40mum and 50mum spacing are fabricated. Resistance of the fabricated via is measured. The thermal characteristics of the silicon through-via are under evaluation

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2007 International Conference on Thermal Issues in Emerging Technologies: Theory and Application

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