用于定时参考和传感应用的MEMS谐振器的CMOS兼容制造工艺

D. H. Huynh, P. Nguyen, T. Nguyen, S. Skafidas, R. Evans
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摘要

频率参考和定时控制装置在电子应用中无处不在。每个设备至少需要一个谐振器。目前,晶体谐振器、陶瓷谐振器等机电谐振器是理想的选择。这种趋势可能还会持续许多年。然而,目前市场对小尺寸、低功耗、便宜可靠的产品的需求,已经暴露了这类谐振器的许多局限性。由于材料和制造工艺的不兼容,它们不能集成到标准的CMOS(互补金属氧化物半导体)集成电路中。目前,这些设备是片外的,它们需要外部电路与集成电路接口。这种配置大大增加了整个电子系统的总体尺寸和成本。此外,额外的外部连接,特别是在高频下,由于信号退化和寄生效应,可能会对整个系统的性能产生负面影响。此外,由于片外封装的性质,这些器件相当昂贵,特别是对于高频和高质量因数器件。为了解决这些问题,研究人员一直在深入研究利用新兴的MEMS(微机电系统)技术替代谐振器类型。该领域的最新进展已经证明了谐振频率为2.97 GHz,质量因子(在真空中测量)为42900的MEMS谐振器。尽管取得了巨大的成就,但由于制造工艺的不兼容性和串联运动阻抗高,该原型仍远未完全集成到CMOS系统中。另一方面,已经展示了完全集成的MEMS谐振器,但频率和质量因子较低。我们提出了一种低成本、高频率和高质量的MEMS谐振器的设计和制造工艺,该谐振器可以集成到标准的CMOS IC中。该器件有望在数百Mhz的频率范围内工作;品质因数超过10000,串联运动阻抗低,无需费力即可与传统系统匹配。该MEMS谐振器可用于设计无线和射频系统中的许多模块,如低相位噪声振荡器,带通滤波器,功率放大器和许多传感应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application
Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard CMOS IC. This device is expected to operate in hundreds of Mhz frequency range; quality factor surpasses 10000 and series motional impedance low enough that could be matching into conventional system without enormous effort. This MEMS resonator can be used in the design of many blocks in wireless and RF (Radio Frequency) systems such as low phase noise oscillator, band pass filter, power amplifier and in many sensing application.
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