用于混合电路设计的单电子晶体管分析模型

M. Bounouar, F. Calmon, A. Beaumont, M. Guilmain, W. Xuan, S. Ecoffey, D. Drouin
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引用次数: 8

摘要

基于Verilog-A语言,开发并实现了一种新的单电子晶体管(SET)分析模型,用于混合SET- cmos逻辑电路设计。该模型基于稳态主方程(ME)。考虑到隧道结和热离子发射的物理特性,该模型的实现忠实地再现了金属SET在室温下工作的行为。通过对混合SET- cmos通用逻辑门单元的分析,说明了这种紧凑的SET模型的效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single Electron Transistor analytical model for hybrid circuit design
A novel analytical and compact model of Single Electron Transistor (SET) is developed and implemented in Verilog-A language for use in hybrid SET-CMOS logic circuit design. The model is based on the steady state Master-Equation (ME). The implementation of this original and simple model, taking into account physical characteristics of tunnel junctions and the thermionic emission, has faithfully reproduced the behavior of metallic SET operating at room temperature. The hybrid SET-CMOS universal logic gate cell is analyzed to illustrate the efficiency of this compact SET model.
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