Hang Hu, S. Ding, Chunxiang Zhu, S. Rustagi, Y. Lu, M. F. Li, B. Cho, D. Chan, M. Yu, A. Chin, D. Kwong
{"title":"用于Si射频和混合信号集成电路的PVD HfO/sub /MIM电容器的研究","authors":"Hang Hu, S. Ding, Chunxiang Zhu, S. Rustagi, Y. Lu, M. F. Li, B. Cho, D. Chan, M. Yu, A. Chin, D. Kwong","doi":"10.1109/ISDRS.2003.1272118","DOIUrl":null,"url":null,"abstract":"The electrical characteristics of high-/spl kappa/ PVD HfO/sub 2/ metal-insulator-metal (MIM) capacitors from IF (10 KHz) to RF (20 GHz) frequency range is investigated in this paper. High-/spl kappa/ HfO/sub 2/ dielectric with two thicknesses of 22 and 47 nm are fabricated, the respective capacitance densities are 7.3 and 3.5 fF//spl mu/m/sup 2/ and the two samples are denoted as HfO-1 to HfO-2. To investigate the capacitance characteristics of HfO/sub 2/ MIM capacitors in RF regime, the equivalent circuit model for capacitance is established. Thickness dependence of stress induced leakage currents (SILCs) for HfO/sub 2/ MIM capacitors is observed from J-V characteristics. For the C-V characteristics of HfO/sub 2/ MIM capacitors, the distortion of C-V curve after stress was reflected by the reduction of quadratic coefficients, exhibiting a flatten-out characteristic.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Investigation of PVD HfO/sub 2/MIM capacitors for Si RF and mixed signal ICs application\",\"authors\":\"Hang Hu, S. Ding, Chunxiang Zhu, S. Rustagi, Y. Lu, M. F. Li, B. Cho, D. Chan, M. Yu, A. Chin, D. Kwong\",\"doi\":\"10.1109/ISDRS.2003.1272118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical characteristics of high-/spl kappa/ PVD HfO/sub 2/ metal-insulator-metal (MIM) capacitors from IF (10 KHz) to RF (20 GHz) frequency range is investigated in this paper. High-/spl kappa/ HfO/sub 2/ dielectric with two thicknesses of 22 and 47 nm are fabricated, the respective capacitance densities are 7.3 and 3.5 fF//spl mu/m/sup 2/ and the two samples are denoted as HfO-1 to HfO-2. To investigate the capacitance characteristics of HfO/sub 2/ MIM capacitors in RF regime, the equivalent circuit model for capacitance is established. Thickness dependence of stress induced leakage currents (SILCs) for HfO/sub 2/ MIM capacitors is observed from J-V characteristics. For the C-V characteristics of HfO/sub 2/ MIM capacitors, the distortion of C-V curve after stress was reflected by the reduction of quadratic coefficients, exhibiting a flatten-out characteristic.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of PVD HfO/sub 2/MIM capacitors for Si RF and mixed signal ICs application
The electrical characteristics of high-/spl kappa/ PVD HfO/sub 2/ metal-insulator-metal (MIM) capacitors from IF (10 KHz) to RF (20 GHz) frequency range is investigated in this paper. High-/spl kappa/ HfO/sub 2/ dielectric with two thicknesses of 22 and 47 nm are fabricated, the respective capacitance densities are 7.3 and 3.5 fF//spl mu/m/sup 2/ and the two samples are denoted as HfO-1 to HfO-2. To investigate the capacitance characteristics of HfO/sub 2/ MIM capacitors in RF regime, the equivalent circuit model for capacitance is established. Thickness dependence of stress induced leakage currents (SILCs) for HfO/sub 2/ MIM capacitors is observed from J-V characteristics. For the C-V characteristics of HfO/sub 2/ MIM capacitors, the distortion of C-V curve after stress was reflected by the reduction of quadratic coefficients, exhibiting a flatten-out characteristic.
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