氮自由基束混合脉冲激光沉积在Si上生长TiN [100]

K. Obata, K. Sugioka, K. Toyoda, H. Takai, K. Midorikawa
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引用次数: 0

摘要

结果表明,PLD和氮基束的结合可以在Si衬底上生长出高质量的TiN薄膜,而不会在界面处发生硅化。x射线光电子能谱(XPS)分析表明,该方法可以合成化学计量TiN薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
TiN growth on Si[100] by hybrid pulsed laser deposition with nitrogen radical beam
It is shown that a combination of PLD and nitrogen radical beams can grow high quality TiN films on a Si substrate without silicidation at the interface. Analysis using X-ray photoelectron spectroscopy (XPS) revealed that this method achieves synthesis of stoichiometric TiN films.
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