硅纳米晶存储单元中的电荷注入长度

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345503

T. Osabe, T. Ishii, T. Mine, T. Sano, T. Arigane, T. Fukumura, H. Kurata, S. Saeki, Y. Ikeda, K. Yano

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引用次数: 4

摘要

我们提出了用源侧注入(SSI)编程的硅纳米晶存储细胞的侧向电荷注入长度的第一个实验研究。电荷泵浦测量表明，SSI编程的注入长度可减少到24 nm，这表明将2位/单元操作的纳米晶存储器缩小到90-65 nm技术节点范围的可能性。

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Charge-injection length in silicon nanocrystal memory cells

We present the first experimental investigation of the lateral charge-injection length for silicon nanocrystal memory cells programmed with source-side injection (SSI). Charge-pumping measurements reveal that the injection length of SSI programming is reducible to 24 nm and suggest the possibility of scaling down the nanocrystal memory for 2-bit/cell operation to the 90-65-nm range of technology nodes.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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