采用90纳米CMOS技术的1∶4解复用器的40gb /s四分之一速率CDR

Shuangchao Yan, Yingmei Chen, Tao Wang, Hui Wang
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引用次数: 8

摘要

提出了一种采用IBM 90纳米CMOS技术,采用1∶4解复用器的40gb /s锁相时钟和数据恢复电路。CDR电路包含一个无电感的八相LC压控振荡器(VCO)和一个四分之一速率的bang-bang鉴相器(PD)。提出了一种新型的无电感式八相LC压控振荡器,它包括四个LC振荡器单元,用于产生八相输出。提出了一种采用8个触发器的四分之一速率鉴相器。当CDR电路被锁定时,40gb /s的输入数据被8个并行的差分主备触发器每12.5 ps采样一次,40gb /s的数据被解复用成4个10gb /s的输出。恢复的时钟显示200mV输出摆幅和0.2 psrms和0.6 pspp的抖动。重新计时的数据显示200mV的输出摆幅和0.5 psrms和2.1 pspp的抖动。CDR电路从1.2 V电源消耗72 mW,不包括缓冲区。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 40-Gb/s quarter rate CDR with 1∶4 demultiplexer in 90-nm CMOS technology
This paper presents a 40-Gb/s phase-locked clock and data recovery (CDR) circuit with 1∶4 demultiplexer in IBM 90-nm CMOS technology. The CDR circuit incorporates an inductorless eight-phase LC voltage-controlled oscillator (VCO) and a quarter-rate bang-bang phase detector (PD). A novel inductorless eight-phase LC VCO including four LC oscillator cells is presented to generate the eight-phase outputs. A one-forth-rate phase detector employing eight flip-flops is proposed. The 40-Gb/s input data are sampled with eight parallel different-ial master-salve flip-flops every 12.5 ps and the 40-Gb/s data are demultiplexed into four 10-Gb/s outputs when the CDR circuit is locked. The recovered clock exhibits 200mV output swing and a jitter of 0.2 psrms and 0.6 pspp. The retimed data exhibits 200mV output swing and a jitter of 0.5 psrms and 2.1 pspp. The CDR circuit consumes 72 mW from a 1.2 V supply excluding out buffers.
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