用于射电天文接收机的$0.15-\mu \ mathm {m}$ GaAs pHEMT全集成$S$波段差分LNA

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2018-08-01 DOI:10.1109/RFIT.2018.8524069

Wei-Cheng Huang, Chau-Ching Chiong, Huei Wang

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引用次数: 0

摘要

提出了一种差分输入、单端输出的全集成s波段高增益MMIC低噪声放大器(LNA)，并在$0.15-{\mu} \mathbf{m}$ GaAs pHEMT中实现。设计了低损耗输入噪声匹配网络，并在一级LNA核心和二级放大器之间引入全片上LC平衡，提高了系统整体噪声系数。LNA的1db带宽范围为1.5 ~ 3.7 GHz。测量结果显示，增益为31.8 dB，平均带内噪声系数为0.73 dB，直流功耗为25 mW。芯片面积为$2.5 \乘以2\ \mathbf{mm}^{2}$。此外，本文还介绍了一种用于3口差分输入到单端输出放大器的噪声系数测量方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Fully-Integrated $S$-Band Differential LNA in $0.15-\mu \mathrm{m}$ GaAs pHEMT for Radio Astronomical Receiver

A fully-integrated S-band high-gain MMIC low noise amplifier (LNA) with differential input and single-ended output is presented and implemented in $0.15-{\mu} \mathbf{m}$ GaAs pHEMT for Square Kilometre Array (SKA) astronomical receiver. The low-loss input noise matching network is designed, and the fully on-chip LC balun is introduced between the first stage LNA core and the second stage amplifier to improve overall system noise figure. The 1-dB bandwidth of the LNA covers from 1.5 to 3.7 GHz. The measurement results demonstrate 31.8-dB gain, average in-band noise figure of 0.73 dB with DC power consumption of 25 mW. The chip area is $2.5 \times 2\ \mathbf{mm}^{2}$. Also, a noise figure measurement method for the 3-port differential-input-to-single-ended-output amplifiers is introduced in this paper.

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2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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