一种改进高阶温度补偿的CMOS带隙参考电路

Savvas Koudounas, C. M. Andreou, J. Georgiou
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引用次数: 11

摘要

本文提出了一种新的CMOS带隙参考发生器拓扑结构,该拓扑结构允许通过仅使用多晶硅电阻直接实现精确的曲率补偿方法。这是通过使用第二个Opamp产生CTAT电流来实现的,该电流随后用于增强曲率补偿方法。在参考电压的温度敏感性方面,实现了比先前提出的架构更优越的理论性能。在名义模拟中,它小于0。对于CMOS 0.35μm技术,温度范围为- 40至125,温度范围为lppm。在实践中,所提出的BGR对器件失配敏感,因此如果需要高性能,则需要电阻微调。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel CMOS Bandgap reference circuit with improved high-order temperature compensation
This paper proposes a new CMOS Bandgap Reference Generator topology that allows a straightforward implementation of an exact curvature compensation method by using only poly-silicon resistors. This is achieved by using a second Opamp that generates a CTAT current, which is subsequently used to enhance the curvature compensation method. A superior theoretical performance than previously proposed architectures is achieved with respect to temperature sensitivity of the reference voltage. In nominal simulations, that was less than 0.lppm over a temperature range of −40 to 125 for a CMOS 0.35μm technology. In practice, the proposed BGR is sensitive to device mismatch and thus resistor trimming is necessary if high performance is required.
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