离子注入波导饱和吸收器抑制10gb /s噪声

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference Pub Date : 2006-05-21 DOI:10.1109/CLEO.2006.4627940

M. Pantouvaki, S. Kong, M. Fice, A. Seeds, R. Gwilliam, P. Cannard

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引用次数: 1

摘要

采用顶部植入的无源InGaAsP/InGaAsP多量子阱脊波导饱和吸收器，证明了每通3 dB的噪声抑制效果。对比度和恢复时间分别为3db和~ 16ps。

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10 Gb/s noise suppression using an ion implanted waveguide saturable absorber

Noise suppression of 3 dB per pass is demonstrated using a top-implanted passive InGaAsP/InGaAsP multiple quantum well ridge waveguide saturable absorber. The contrast ratio and recovery time are 3 dB and ~16 ps respectively.

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来源期刊

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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