IC掩模-最新技术的挑战

M. Niewczas
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引用次数: 0

摘要

我们回顾了与公元2022年面具制作相关的主要问题和技术挑战。本概述是针对处理集成电路物理设计的工程师。在从7nm工艺节点过渡到5nm工艺节点的量产过程中,刚刚引入了两个重大进展:EUV光刻和多光束掩模写入。结合起来,它们提高了精度,工艺裕度和晶圆吞吐量。然而,它们带来了我们在这里讨论的各种挑战和机遇。此外,在软件方面,目前正在解决两个关键问题,即数据量爆炸和巨大的计算需求。这些问题正在通过迁移到新的数据格式、曲线几何和利用GPU集群上的超级计算的新算法来解决。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
IC Masks - The Challenges of the Newest Technologies
We review major problems and technical challenges related to mask making A.D. 2022. This overview is addressed to engineers dealing with physical design of ICs. Two significant advances have been just introduced to the volume manufacturing in transition from 7nm to 5nm process nodes: EUV lithography and multibeam mask writing. Combined, they improve accuracy, process margin and wafer throughput. However, they introduce various challenges and opportunities that we discuss here. Moreover, on the software side, two critical issues are being addressed currently, the data volume explosion and tremendous computational requirement. These are being addressed with the move to new data formats, curvilinear geometry and new algorithms utilizing supercomputing on GPU clusters.
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