通过重复注入-退火序列改善GaAs/AlGaAs量子阱结构的混合

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791616

H. Tan, L. Fu, M. Johnston, L. Dao, M. Gal, C. Jagadish

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引用次数: 1

摘要

采用离子(质子)注入诱导GaAs/AlGaAs量子阱的混合。退火后观察到非常大的能量位移(高达160 meV)。然而，通过重复植入-退火序列，能量转移得到进一步改善。得到的能量位移增加了大约两倍。该序列随后被用于制造用于多波长器件集成的激光二极管。与单一植入相比，该序列显著改善了激光阈值特性。

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Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

Ion (proton) implantation was used to induce intermixing in GaAs/AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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