集成了MMI耦合器的高速线性模拟多量子阱电吸收调制器

International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301) Pub Date : 1999-11-17 DOI:10.1109/MWP.1999.819644

M. Shin, J. Lim, C.Y. Park, J. Kim, J.S. Kim, K. Pyun, S. Hong

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引用次数: 6

摘要

我们制作了一个由14对InGaAsP/InGaAsP应变补偿多量子阱组成的电吸收调制器，并与对接耦合无源波导集成。在1.53 /spl mu/m时，消光比为16 dB，带宽超过20 GHz。

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High-speed linear analog multiple quantum well electroabsorption modulator integrated with MMI couplers

We fabricated an electroabsorption modulator consisting of 14 pairs of InGaAsP/InGaAsP strain-compensated multiple quantum well and integrated with a butt-coupled passive waveguide. The observed extinction ratio was 16 dB at 1.53 /spl mu/m and the bandwidth was over 20 GHz.

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International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301)

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