0.34THz源中无箔二极管的初步研究

2013 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference Pub Date : 2013-07-21 DOI:10.1109/CSQRWC.2013.6657441

Shuang Li, Guang-qiang Wang, Chang-jiang Tong, Xue-feng Wang

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引用次数: 0

摘要

介绍了一种用于高功率0.34THz表面波振荡器(SWO)源的高光束质量无箔二极管。为了研究引导磁场和结构参数对无箔二极管性能的影响，引入了2.5维胞内粒子(PIC)编码方法。仿真结果表明，考虑到电子回旋半径，引导磁场应大于2.5特斯拉，光束与阳极壁之间的距离最好设置为0.22~0.40mm。阳极半径对二极管有重要影响，在0.34THz源中选择5~8 mm。调整阴极和阳极之间的距离也可以影响二极管。最后，对优化后的二极管进行了研究，该二极管可以提供电流为2.3kA、电子能量为380keV的高质量束流，很好地满足了0.34THz源的要求。

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Primary study of foilless diode used in 0.34THz source

A high beam quality foilless diode for high power 0.34THz surface-wave oscillator (SWO) source is presented in this paper. In order to research the influence of the guiding magnetic field and the structural parameters on the performance of foilless diode, the method of 2.5 dimensional particle-in-cell (PIC) codes UNIPIC is introduced. The simulation results suggest that the guiding magnetic field should be higher than 2.5 tesla and the distance between the beam and anode-wall had better to be set as 0.22~0.40mm considering the cyclotron radius of electron. The radius of anode has an important impact on the diode and it is chose as 5~8 mm in 0.34THz source. The adjustment of the distance between cathode and anode is also available to affect the diode. Finally, the optimized diode is studied and the diode can provide a high quality beam with the current of 2.3kA and electron energy of 380keV, which satisfies the demand of 0.34THz source well.

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2013 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference

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