用于测定阿伏伽德罗常数的硅单晶M//spl rho/量的实验测定

P. De Biévre, S. Valkiers, S. Peiser, F. Spieweck, H. Bettin, A. Peuto, A. Sacconi, M. Mosca, K. Fujii, M. Tanaka, Y. Nezu
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引用次数: 3

摘要

利用PTB-IRMM、IMGC-IRMM和NRLM-IRMM项目对阿佛伽德罗常数的再测定,在测量硅晶体的摩尔质量M(Si)和相同晶体的高精度密度(/spl rho/)方面取得了相当大的改进,得到了实验M(Si)//spl rho/值。这些M(Si)//spl rho/值与归属不确定性进行比较,与硅的常数M(Si)//spl rho/的假设有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental determinations of the quantity M//spl rho/ for silicon single crystals used in the determination of the Avogadro constant
Considerable improvements in the measurements of the molar mass M(Si) of silicon crystals combined with high-accuracy densities (/spl rho/) of the same crystals, have yielded experimental M(Si)//spl rho/ values resulting from the PTB-IRMM, the IMGC-IRMM and the NRLM-IRMM projects for the redetermination of Avogadro's Constant. These M(Si)//spl rho/ values are compared with attributed uncertainties, in relation to the supposition of constancy M(Si)//spl rho/ for silicon.<>
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