内置自检的w波段SiGe收发器

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2019-05-07 DOI:10.1109/SIRF.2019.8709094

S. Zeinolabedinzadeh, A. C. Ulusoy, R. Schmid, F. Inanlou, I. Song, T. Chi, J. Park, H. Wang, J. Cressler

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引用次数: 2

摘要

提出了一种完全集成的w波段硅锗(SiGe)收发器，它提供了一个环回内置自检(BIST)功能，允许在使用过程中连续监测系统的健康状况。此外，它有助于在芯片上测量发射和接收通道，以帮助表征大型相控阵系统内的收发器。测量结果表明，片上和片外的表征结果非常一致。收发器可以通过施加控制信号从正常工作模式切换到BIST模式。测量显示，接收机SSB噪声系数为12 dB, P1dB为-8.5 dBm，发射机输出功率为+8 dBm。整个收发器的功耗为150mw。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A W-Band SiGe Transceiver with Built-in Self-Test

A fully integrated W-band silicon-germanium (SiGe) transceiver is presented which provides a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the health of the system while in use. In addition, it facilitates on-die measurement of the transmit and receive channels to aid in characterization of the transceivers inside a large phased array system. Measurement results show a close agreement between the on-die and off-chip characterization results. The transceiver can switch from normal operation mode to BIST mode by applying a control signal. Measurement shows receiver SSB noise figure of 12 dB and P1dB of -8.5 dBm and transmitter output power of +8 dBm. The power consumption of the entire transceiver is 150 mW.

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来源期刊

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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