不同高k值无结环栅TFET的ION/IOFF改进

2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) Pub Date : 2021-07-09 DOI:10.1109/CONECCT52877.2021.9622720

P. Vimala, Manjunath Bassapuri, Harshavardhan C R, Krishnan Maheshwari, Harshith P, Nitin N Raikar

{"title":"不同高k值无结环栅TFET的ION/IOFF改进","authors":"P. Vimala, Manjunath Bassapuri, Harshavardhan C R, Krishnan Maheshwari, Harshith P, Nitin N Raikar","doi":"10.1109/CONECCT52877.2021.9622720","DOIUrl":null,"url":null,"abstract":"The research paper recounts about the 3-D nanodevice, Junctionless Surrounding gate Tunnel FET. The proposed structure is simulated using a TCAD device simulator. The electrical parameters like Surface Potential, Electric Field, Drain current, Transconductance were analyzed. The proposed structure was simulated to implement and analyze the characteristics of stacked oxide layer. Comparing the results of device Transverse characteristics for Junction and Devoid of Junction, the outperformance of Junctionless Surrounding gate Tunnel FET was obtained.","PeriodicalId":164499,"journal":{"name":"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"ION/IOFF Improvement for No Junction Surrounding Gate TFET with different high-k values\",\"authors\":\"P. Vimala, Manjunath Bassapuri, Harshavardhan C R, Krishnan Maheshwari, Harshith P, Nitin N Raikar\",\"doi\":\"10.1109/CONECCT52877.2021.9622720\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The research paper recounts about the 3-D nanodevice, Junctionless Surrounding gate Tunnel FET. The proposed structure is simulated using a TCAD device simulator. The electrical parameters like Surface Potential, Electric Field, Drain current, Transconductance were analyzed. The proposed structure was simulated to implement and analyze the characteristics of stacked oxide layer. Comparing the results of device Transverse characteristics for Junction and Devoid of Junction, the outperformance of Junctionless Surrounding gate Tunnel FET was obtained.\",\"PeriodicalId\":164499,\"journal\":{\"name\":\"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)\",\"volume\":\"2016 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CONECCT52877.2021.9622720\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CONECCT52877.2021.9622720","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了三维纳米器件——无结环栅隧道场效应管。利用TCAD设备模拟器对所提出的结构进行了仿真。分析了表面电位、电场、漏极电流、跨导等电学参数。对所提出的结构进行了仿真，实现并分析了堆叠氧化层的特性。比较了无结和无结的器件横向特性，得出了无结环栅隧道场效应管的优越性能。

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ION/IOFF Improvement for No Junction Surrounding Gate TFET with different high-k values

The research paper recounts about the 3-D nanodevice, Junctionless Surrounding gate Tunnel FET. The proposed structure is simulated using a TCAD device simulator. The electrical parameters like Surface Potential, Electric Field, Drain current, Transconductance were analyzed. The proposed structure was simulated to implement and analyze the characteristics of stacked oxide layer. Comparing the results of device Transverse characteristics for Junction and Devoid of Junction, the outperformance of Junctionless Surrounding gate Tunnel FET was obtained.

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2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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