高密度电感耦合等离子体直接氮化硅表面

A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, P. S. Zazulya, G. N. Kamaev
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引用次数: 0

摘要

制备了超薄氮氧硅薄膜。薄膜是在大孔径源等离子体化学反应器中采用直接N等离子体处理获得的。用各种方法对薄膜的性能进行了测试,证实了薄膜具有良好的电子质量。讨论了薄膜生长机理的特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct nitridation of silicon surface by high-density inductively coupled plasma
Ultra-thin silicon oxy-nitride films were created. The films were obtained by using direct N plasma treatment in plasma-chemical reactor with a wide aperture source. Properties of the films were examined by various methods and their good electron quality was confirmed. Features of film growth mechanism are discussed.
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