{"title":"高压直流应用中模块化多电平变换器中IGCT和IGBT的比较","authors":"M. Buschendorf, J. Weber, S. Bernet","doi":"10.1109/SSD.2012.6198118","DOIUrl":null,"url":null,"abstract":"This paper describes briefly the modeling of the modular multilevel converter, which was introduced by Rainer Marquardt [1]. The mathematical model is used to calculate the average losses and junction temperature of the semiconductor devices in dependence on the converter output power. The junction temperature, the semiconductor losses and their several components are shown in order to compare a converter with IGCTs and a converter with IGBTs as switches. The comparison is made to show in which operating point the one or the other has its advantages.","PeriodicalId":425823,"journal":{"name":"International Multi-Conference on Systems, Sygnals & Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":"{\"title\":\"Comparison of IGCT and IGBT for the use in the modular multilevel converter for HVDC applications\",\"authors\":\"M. Buschendorf, J. Weber, S. Bernet\",\"doi\":\"10.1109/SSD.2012.6198118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes briefly the modeling of the modular multilevel converter, which was introduced by Rainer Marquardt [1]. The mathematical model is used to calculate the average losses and junction temperature of the semiconductor devices in dependence on the converter output power. The junction temperature, the semiconductor losses and their several components are shown in order to compare a converter with IGCTs and a converter with IGBTs as switches. The comparison is made to show in which operating point the one or the other has its advantages.\",\"PeriodicalId\":425823,\"journal\":{\"name\":\"International Multi-Conference on Systems, Sygnals & Devices\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"46\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Multi-Conference on Systems, Sygnals & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSD.2012.6198118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Multi-Conference on Systems, Sygnals & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSD.2012.6198118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of IGCT and IGBT for the use in the modular multilevel converter for HVDC applications
This paper describes briefly the modeling of the modular multilevel converter, which was introduced by Rainer Marquardt [1]. The mathematical model is used to calculate the average losses and junction temperature of the semiconductor devices in dependence on the converter output power. The junction temperature, the semiconductor losses and their several components are shown in order to compare a converter with IGCTs and a converter with IGBTs as switches. The comparison is made to show in which operating point the one or the other has its advantages.
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