{"title":"基于Si, SOI和碳纳米管(CNT)的高温高压微压阻压力传感器的设计，仿真和分析","authors":"Kirankumar B. Balavalad, B. G. Sheeparamatti","doi":"10.1109/ICCSDET.2018.8821104","DOIUrl":null,"url":null,"abstract":"The paper, presents the design and analysis of micro piezoresistive pressure sensors using Si, SOI & CNT (Carbon Nanotube) for harsh environment. The sensors were analyzed for the important parameters like sensitivity and temperature sensitivity. Pressure range of 0 to 1MPa, over which the sensors behave linear is considered for analysis. Results reveal that the micro pressure sensor using CNT as piezoresistor has better sensitivity of 308.7mV/MPa (30.8mV/bar), which is better than the sensitivities obtained for silicon & SOI based sensors. CNT is considered as piezoresistor in the design of micro pressure sensor, because of its high gauge factor and an excellent piezoresistive property compared to Si & SOI based sensors. High temperature analysis, depict that CNT & SOI pressure sensors can be used for high temperature applications, with better sensitivity over a linear range.","PeriodicalId":157362,"journal":{"name":"2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design, Simulation & Analysis of Si, SOI & Carbon Nanotube (CNT) based Micro Piezoresistive Pressure Sensor for a High Tmeperature & Pressure\",\"authors\":\"Kirankumar B. Balavalad, B. G. Sheeparamatti\",\"doi\":\"10.1109/ICCSDET.2018.8821104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper, presents the design and analysis of micro piezoresistive pressure sensors using Si, SOI & CNT (Carbon Nanotube) for harsh environment. The sensors were analyzed for the important parameters like sensitivity and temperature sensitivity. Pressure range of 0 to 1MPa, over which the sensors behave linear is considered for analysis. Results reveal that the micro pressure sensor using CNT as piezoresistor has better sensitivity of 308.7mV/MPa (30.8mV/bar), which is better than the sensitivities obtained for silicon & SOI based sensors. CNT is considered as piezoresistor in the design of micro pressure sensor, because of its high gauge factor and an excellent piezoresistive property compared to Si & SOI based sensors. High temperature analysis, depict that CNT & SOI pressure sensors can be used for high temperature applications, with better sensitivity over a linear range.\",\"PeriodicalId\":157362,\"journal\":{\"name\":\"2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET)\",\"volume\":\"141 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCSDET.2018.8821104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCSDET.2018.8821104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design, Simulation & Analysis of Si, SOI & Carbon Nanotube (CNT) based Micro Piezoresistive Pressure Sensor for a High Tmeperature & Pressure
The paper, presents the design and analysis of micro piezoresistive pressure sensors using Si, SOI & CNT (Carbon Nanotube) for harsh environment. The sensors were analyzed for the important parameters like sensitivity and temperature sensitivity. Pressure range of 0 to 1MPa, over which the sensors behave linear is considered for analysis. Results reveal that the micro pressure sensor using CNT as piezoresistor has better sensitivity of 308.7mV/MPa (30.8mV/bar), which is better than the sensitivities obtained for silicon & SOI based sensors. CNT is considered as piezoresistor in the design of micro pressure sensor, because of its high gauge factor and an excellent piezoresistive property compared to Si & SOI based sensors. High temperature analysis, depict that CNT & SOI pressure sensors can be used for high temperature applications, with better sensitivity over a linear range.
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