寄生电阻对激光结晶LT多晶硅tft迁移率的影响

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI:10.1109/ASID.1999.762765

Shih-chang Chang, Chung‐Chih Wu, I. Lu, Y. Chen

{"title":"寄生电阻对激光结晶LT多晶硅tft迁移率的影响","authors":"Shih-chang Chang, Chung‐Chih Wu, I. Lu, Y. Chen","doi":"10.1109/ASID.1999.762765","DOIUrl":null,"url":null,"abstract":"Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated The minimum off current at Vd=10 V in these TFTs is scalable and is about 0.15 pA//spl mu/m. Significant reduction of mobility was observed in short channel devices due to parasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm/sup 2//Vs, it is necessary to keep Rp below 200 ohm.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Effect of parasitic resistance on mobility in laser crystallized LT poly-Si TFTs\",\"authors\":\"Shih-chang Chang, Chung‐Chih Wu, I. Lu, Y. Chen\",\"doi\":\"10.1109/ASID.1999.762765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated The minimum off current at Vd=10 V in these TFTs is scalable and is about 0.15 pA//spl mu/m. Significant reduction of mobility was observed in short channel devices due to parasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm/sup 2//Vs, it is necessary to keep Rp below 200 ohm.\",\"PeriodicalId\":170859,\"journal\":{\"name\":\"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASID.1999.762765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASID.1999.762765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研究了不同通道长度激光结晶低温(LT)多晶硅薄膜晶体管(TFTs)中寄生电阻(Rp)对迁移率的影响。这些晶体管在Vd=10 V时的最小关断电流是可扩展的，约为0.15 pA//spl mu/m。由于寄生电阻，在短通道器件中观察到显著的迁移率降低。根据我们对高性能短通道LT多晶硅tft的Rp要求的分析，为了避免迁移率大于300 cm/sup 2//Vs时迁移率的显著下降，有必要将Rp保持在200 ohm以下。

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Effect of parasitic resistance on mobility in laser crystallized LT poly-Si TFTs

Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated The minimum off current at Vd=10 V in these TFTs is scalable and is about 0.15 pA//spl mu/m. Significant reduction of mobility was observed in short channel devices due to parasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm/sup 2//Vs, it is necessary to keep Rp below 200 ohm.

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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

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