用于IVR的高电感、高密度、低直流电阻紧凑型嵌入式环形电感器的演示

Claudio Alvarez, Prahalad Murali, M. Swaminathan, Yusuke Oishi, Junichi Takashiro, Ryo Nagatsuka, Naoki Watanabe
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引用次数: 4

摘要

下一代高性能计算(HPC)平台对运行速度和功耗的要求越来越高。IVR (Integrated voltage regulators)集成电压调节器,转换比为12v ~ 1v,可以降低PDN (power distribution network)阻抗,提高电压转换效率,增加调节带宽。在这项工作中,我们提出了一种新的封装嵌入式电感阵列,用于多相ivr,其直流电阻低至$\mathrm{22}.\mathrm{8}\ \mathrm{m}\Omega$。演示了三种磁性材料的电感器。用一种材料可获得高达475 nH的小信号电感,适用于在2mhz下进行12v到1v的转换。另一种材料的电感为192nh,适用于12v至1v的ivr,频率为5mhz。每个电感占地小于6.25平方毫米,并建立与$\mathrm{400}\ \mu \mathrm{m}$厚金属聚合物复合磁性片。单位电感或$R_{acx}$的度量有效交流电阻用于预测电感的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Demonstration of a High-Inductance, High-Density, and Low DC Resistance Compact Embedded Toroidal Inductor for IVR
Next-generation high-performance computing (HPC) platform requires to run at higher speed with higher power consumption levels. Integrated voltage regulators (IVR) with a conversion ratio of 12 V to 1 V can help to reduce the power distribution network (PDN) impedance, increase the voltage conversion efficiency, and increase the regulation bandwidth. In this work, we present a new package embedded inductor array for multi-phase IVRs with a DC resistance as low as $\mathrm{22}.\mathrm{8}\ \mathrm{m}\Omega$. Inductors with three magnetic materials are demonstrated. With one material a small signal inductance as high as 475 nH is obtained, suitable for 12 V to 1 V conversion at 2 MHz. Another material gives an inductance of 192 nH suitable for 12 V to 1 V IVRs at 5 MHz. Each inductor occupies less than 6.25 mm2 and are built with $\mathrm{400}\ \mu \mathrm{m}$ thick metal polymer composite magnetic sheets. The metric effective AC resistance per unit inductance or $R_{acx}$ is used to predict the inductor performance.
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