Y. Komatsu, T. Yamaguchi, T. Otobe, M. Hirabayashi
{"title":"采用新型介电谐振腔的MIC稳频振荡器","authors":"Y. Komatsu, T. Yamaguchi, T. Otobe, M. Hirabayashi","doi":"10.1109/MWSYM.1981.1129909","DOIUrl":null,"url":null,"abstract":"A GaAs FET MIC oscillator with very high frequency stability has been developed using a newly-developed dielectric resonator. The key to designing the dielectric resonator was to make the temperature dependence of the resonance frequency linear. This characteristic was realized in a stacking-type dielectric resonator with zirconate ceramics. The obtained frequency stability of /spl plusmn/85 kHz in temperatures -20 to +60/spl deg/C is sufficient for AM SHF TV receivers.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A Frequency-Stabilized MIC Oscillator Using a Newly-Developed Dielectric Resonator\",\"authors\":\"Y. Komatsu, T. Yamaguchi, T. Otobe, M. Hirabayashi\",\"doi\":\"10.1109/MWSYM.1981.1129909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A GaAs FET MIC oscillator with very high frequency stability has been developed using a newly-developed dielectric resonator. The key to designing the dielectric resonator was to make the temperature dependence of the resonance frequency linear. This characteristic was realized in a stacking-type dielectric resonator with zirconate ceramics. The obtained frequency stability of /spl plusmn/85 kHz in temperatures -20 to +60/spl deg/C is sufficient for AM SHF TV receivers.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"141 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Frequency-Stabilized MIC Oscillator Using a Newly-Developed Dielectric Resonator
A GaAs FET MIC oscillator with very high frequency stability has been developed using a newly-developed dielectric resonator. The key to designing the dielectric resonator was to make the temperature dependence of the resonance frequency linear. This characteristic was realized in a stacking-type dielectric resonator with zirconate ceramics. The obtained frequency stability of /spl plusmn/85 kHz in temperatures -20 to +60/spl deg/C is sufficient for AM SHF TV receivers.