P. Kim, Y. Yoo, S. Yu, I. A. Turpanov, D. L. Khalyapin, D.A. Maruschenko, J. Yun, J. Rhee
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Indirect Exchange Interaction between F and AF Layers
In this work we represent a comprehensive study of indirect exchange coupling between ferromagnetic (F) and antiferromagnetic (AF) layers carried out on NiFe(5 nm)/Cu(d)/IrMn(10 nm) thin film structure. NiFe/Cu/IrMn films were fabricated by magnetron sputtering with a seed and a capping layers of Ta(5nm). The thickness d of the Cu spacer was varied from 0.2 nm to 2 nm. The Cu spacer thickness was carefully controlled by sputter condition and the thickness was confirmed by cross sectional transmission electron microscopy (TEM) and Auger depth profile.
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