不同镍层间距MgB_2/Ni薄膜的制备及其超导性能

章彦 田中, Tanaka Akira, 俊哉 土井, Doi Toshiya, Iwasaki Ikumi, 育美 岩崎, Hakuraku Yoshinori, 善則 白樂, 仁 北口, Kitaguchi Hitoshi, 高橋 健一郎, Takahashi Ken-ichiro, 聰 波多, Hata Satoshi
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引用次数: 2

摘要

我们将展示在几十纳米厚的MgB2层之间插入极薄(1nm)镍层的MgB2/Ni交替层薄膜的超导性能。采用连续切换电子束蒸发和同轴真空电弧蒸发技术,在硅(100)衬底上制备了MgB2/Ni薄膜。在本研究中,我们制备了不同镍层间距的MgB2/Ni交替层状薄膜。Ni层间距分别设置为32、23和16 nm。MgB2/Ni薄膜既不是MgB2和Ni之间的相互扩散也不是化学反应。平行于插入的Ni层施加磁场时,MgB2/Ni薄膜的Jc明显增强,并且随着Ni层间距的减小,Fp-B曲线的峰值位置向更高的磁场偏移。这些结果清楚地表明,插入在交替层状MgB2/Ni薄膜中的Ni层可以作为非常有效的磁钉钉中心。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and Superconducting Properties of Alternately-layered MgB_2/Ni Thin Films with Different Ni-layer Spacing
We will show the superconducting properties of alternately-layered MgB2/Ni thin films inserted as very thin (1 nm) nickel layers between MgB2 layers a few tens of nanometers thick. The MgB2/Ni thin films were prepared on silicon (100) substrates by sequentially switching electron-beam evaporation and coaxial vacuum arc evaporation techniques without post-annealing. In this study, we prepared alternately layered MgB2/Ni thin films with varying Ni-layer spacings. The Ni layer spacings were set to 32, 23 and 16 nm, respectively. The MgB2/Ni thin films were neither inter-diffusion nor chemical reactions between MgB2 and Ni. Clear enhancements of the Jc were observed in the MgB2/Ni thin films when the magnetic fields were applied parallel to the inserted Ni layers, and the peak positions in the Fp–B curves shifted to higher magnetic fields with the decrease of the Ni-layer spacing. These results clearly indicate that the Ni layers inserted in alternately-layered MgB2/Ni thin films work as very effective flux-pinning centers.
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