p通道GaAs/(In,Ga)As应变量子阱场效应晶体管在4k下的工作

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI:10.1109/CORNEL.1987.721216

T. E. Zipperian, T. Drummond, I. J. Fritz

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引用次数: 2

摘要

综述了影响GaAs/(in,Ga)As/GaAs应变量子阱场效应晶体管(sqwfet)中应变诱导光孔传导的结构和环境因素。重要的参数是双轴压缩、价带非抛物线性、二维空穴浓度和温度。为了研究温度对晶体管性能的影响，利用调制掺杂的GaAs/In0.2Ga0.8As/GaAs量子阱结构制备了一个带3.5 um Cr/Au栅极的p沟道SQWFET。在300 ~ 4 K范围内观察到良好的晶体管行为和高跨导。

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Operation Of a p-channel, GaAs/(In,Ga)As, Strained Quantum Well Field-effect Transistor At 4 K

Structural and environmental factors affecting strain-induced light-hole conduction in GaAs/(In,Ga)As/GaAs, strained quantum well field-effect transistors (SQWFETs) are reviewed. Important parameters are biaxial compression, valence band nonparabolicity, two dimensional hole concentration, and temperature. To examine the effects of temperature on transistor performance, a p-channel SQWFET with a 3.5 um Cr/Au gate was fabricated from a modulation-doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well-behaved transistor action and high transconductances were observed from 300 to 4 K.

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IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.

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