一种双栅FET混频器噪声分析的解析方法

ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364) Pub Date : 2000-09-14 DOI:10.1109/ICMMT.2000.895628

G. Moradi, A. Abdipour, A. Ghorbani

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引用次数: 0

摘要

本文提出了一种新的双栅场效应管(DGFET)混频器噪声分析方法。首先，使用一个简单的级联电路对dgfet进行建模。然后，利用谐波平衡(HB)方法进行了大信号-小信号(LSSS)分析。然后，对电路进行小信号线性多频(SSLMF)分析。最后，计算噪声相关矩阵(NCM)和噪声系数(NF)。

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An analytical method for noise analysis of a dual gate FET mixer

A novel analytical approach for noise analysis of dual gate FET (DGFET) mixers is proposed in this paper. At first, a simple cascode circuit is used for modeling DGFETs. Then, the large-signal-small-signal (LSSS) analysis is carried out using the harmonic balance (HB) method. After that, a small signal linear multifrequency (SSLMF) analysis is applied to the circuit. Finally, the noise correlation matrix (NCM) and the noise figure (NF) is calculated.

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ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)

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