冗余对动态比较器中失配引起的偏移和随机噪声的影响

M. Bichan, A. C. Carusone
{"title":"冗余对动态比较器中失配引起的偏移和随机噪声的影响","authors":"M. Bichan, A. C. Carusone","doi":"10.1109/RME.2009.5201314","DOIUrl":null,"url":null,"abstract":"We present an analysis of offset voltage and noise in a dynamic comparator. To limit the offset and noise to acceptable levels, a single comparator must be sized quite large. We show that better use can be made of this die area by dividing it into an array of redundant comparators from which the lowest-offset device is chosen. Monte Carlo simulations with a 45nm CMOS process confirm that the input-offset standard deviation can be reduced arbitrarily in the absence of noise. As the area is divided into a greater number of smaller comparators, random noise overtakes offset as the factor limiting the sensitivity. The competing effects of offset and noise combine to give an optimum number of comparators that maximizes sensitivity for a given total area.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"The effect of redundancy on mismatch-induced offset and random noise in a dynamic comparator\",\"authors\":\"M. Bichan, A. C. Carusone\",\"doi\":\"10.1109/RME.2009.5201314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an analysis of offset voltage and noise in a dynamic comparator. To limit the offset and noise to acceptable levels, a single comparator must be sized quite large. We show that better use can be made of this die area by dividing it into an array of redundant comparators from which the lowest-offset device is chosen. Monte Carlo simulations with a 45nm CMOS process confirm that the input-offset standard deviation can be reduced arbitrarily in the absence of noise. As the area is divided into a greater number of smaller comparators, random noise overtakes offset as the factor limiting the sensitivity. The competing effects of offset and noise combine to give an optimum number of comparators that maximizes sensitivity for a given total area.\",\"PeriodicalId\":245992,\"journal\":{\"name\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2009.5201314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Ph.D. Research in Microelectronics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2009.5201314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

我们提出了一个分析偏置电压和噪声在一个动态比较器。为了将偏移和噪声限制在可接受的水平,单个比较器的尺寸必须相当大。我们表明,通过将该模区划分为冗余比较器阵列,从中选择最低偏移量的器件,可以更好地利用该模区。用45nm CMOS工艺的蒙特卡罗模拟证实,在没有噪声的情况下,输入偏置标准差可以任意减小。由于该区域被划分为更多数量的较小比较器,随机噪声超过了偏移量,成为限制灵敏度的因素。偏移和噪声的相互竞争的影响相结合,给出了一个最佳数量的比较器,最大限度地提高灵敏度,为一个给定的总面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effect of redundancy on mismatch-induced offset and random noise in a dynamic comparator
We present an analysis of offset voltage and noise in a dynamic comparator. To limit the offset and noise to acceptable levels, a single comparator must be sized quite large. We show that better use can be made of this die area by dividing it into an array of redundant comparators from which the lowest-offset device is chosen. Monte Carlo simulations with a 45nm CMOS process confirm that the input-offset standard deviation can be reduced arbitrarily in the absence of noise. As the area is divided into a greater number of smaller comparators, random noise overtakes offset as the factor limiting the sensitivity. The competing effects of offset and noise combine to give an optimum number of comparators that maximizes sensitivity for a given total area.
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