S. Yoshida, G. Fukuda, Y. Kobayashi, S. Tashiro, T. Noji, K. Nishikawa, S. Kawasaki
{"title":"用于空间健康监测系统的c波段MPT整流器,采用HEMT,不带接线连接","authors":"S. Yoshida, G. Fukuda, Y. Kobayashi, S. Tashiro, T. Noji, K. Nishikawa, S. Kawasaki","doi":"10.1109/WPT.2013.6556908","DOIUrl":null,"url":null,"abstract":"This paper demonstrates fundamental evaluation results of a C-band rectifier using GaAs high-electron mobility transistor (HEMT) for microwave power transfer (MPT) inside of future reusable rockets. Rectifiers which utilize HEMT MMICs with hot-via interconnection structure are feasible solution to integrate with conventional wireless communication MMICs or sensor tags for low cost, light weight, and small components for space health monitoring system. Simulation of large signal S-parameters, measurement of rectification efficiency are conducted as a fundamental evaluation. Maximum rectification efficiency of 51.3 % at 5.1 GHz while the load resistance is 350 Ω is obtained from the measurement.","PeriodicalId":143468,"journal":{"name":"2013 IEEE Wireless Power Transfer (WPT)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"The C-band MPT rectifierusing a HEMT without bonding-wire connection for a space health monitoring system\",\"authors\":\"S. Yoshida, G. Fukuda, Y. Kobayashi, S. Tashiro, T. Noji, K. Nishikawa, S. Kawasaki\",\"doi\":\"10.1109/WPT.2013.6556908\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates fundamental evaluation results of a C-band rectifier using GaAs high-electron mobility transistor (HEMT) for microwave power transfer (MPT) inside of future reusable rockets. Rectifiers which utilize HEMT MMICs with hot-via interconnection structure are feasible solution to integrate with conventional wireless communication MMICs or sensor tags for low cost, light weight, and small components for space health monitoring system. Simulation of large signal S-parameters, measurement of rectification efficiency are conducted as a fundamental evaluation. Maximum rectification efficiency of 51.3 % at 5.1 GHz while the load resistance is 350 Ω is obtained from the measurement.\",\"PeriodicalId\":143468,\"journal\":{\"name\":\"2013 IEEE Wireless Power Transfer (WPT)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Wireless Power Transfer (WPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WPT.2013.6556908\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Wireless Power Transfer (WPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WPT.2013.6556908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The C-band MPT rectifierusing a HEMT without bonding-wire connection for a space health monitoring system
This paper demonstrates fundamental evaluation results of a C-band rectifier using GaAs high-electron mobility transistor (HEMT) for microwave power transfer (MPT) inside of future reusable rockets. Rectifiers which utilize HEMT MMICs with hot-via interconnection structure are feasible solution to integrate with conventional wireless communication MMICs or sensor tags for low cost, light weight, and small components for space health monitoring system. Simulation of large signal S-parameters, measurement of rectification efficiency are conducted as a fundamental evaluation. Maximum rectification efficiency of 51.3 % at 5.1 GHz while the load resistance is 350 Ω is obtained from the measurement.