使用交错亚稳态NAND/NOR锁存器的100mhz随机数发生器设计*

Chua-Chin Wang, S. Lu
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引用次数: 1

摘要

本研究展示了一种基于交错NAND / nor的SR (set-reset)锁存器的宽带随机数发生器(RNG)。更具体地说,由相同输入驱动的SR锁存器的亚稳态导致未定义的输出状态被利用。为了实现SR锁存器更高的不规则采样,不仅基于nand的SR锁存器和基于nor的SR锁存器交错集成,而且它们的输入也由另一组亚稳SR锁存器随机选择。即实现两层RNG架构,避免锁定现象,增强随机性。所提出的两层RNG采用典型的40纳米CMOS工艺实现。全ptv角(过程、温度、电压)布局后仿真验证了所提出的RNG通过了长时间运行测试和100 MHz时钟速率下的单比特测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
100 MHz Random Number Generator Design Using Interleaved Metastable NAND/NOR Latches*
This investigation demonstrates a wide bandwidth random number generator (RNG) based on interleaved NAND-/NOR-based SR (set-reset) latches. More specifically, the metastability of SR latches driven by the same input causing undefined output states is exploited. To achieve higher irregular sampling of the SR latches, not only NAND-based SR latches and NOR-based SR latches are interleaved integrated, their inputs are also randomly selected by another array of metastable SR latches. Namely, a 2-layer RNG architecture is realized to avoid locking phenomenon and enhance randomness. The proposed 2-layer RNG is realized using typical 40-nm CMOS process. All-PTV-corner (process, temperature, voltage) post-layout simulations validate that the proposed RNG passes long run test and mono-bit test given 100 MHz clock rate.
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