{"title":"使用交错亚稳态NAND/NOR锁存器的100mhz随机数发生器设计*","authors":"Chua-Chin Wang, S. Lu","doi":"10.1109/APCCAS50809.2020.9301684","DOIUrl":null,"url":null,"abstract":"This investigation demonstrates a wide bandwidth random number generator (RNG) based on interleaved NAND-/NOR-based SR (set-reset) latches. More specifically, the metastability of SR latches driven by the same input causing undefined output states is exploited. To achieve higher irregular sampling of the SR latches, not only NAND-based SR latches and NOR-based SR latches are interleaved integrated, their inputs are also randomly selected by another array of metastable SR latches. Namely, a 2-layer RNG architecture is realized to avoid locking phenomenon and enhance randomness. The proposed 2-layer RNG is realized using typical 40-nm CMOS process. All-PTV-corner (process, temperature, voltage) post-layout simulations validate that the proposed RNG passes long run test and mono-bit test given 100 MHz clock rate.","PeriodicalId":127075,"journal":{"name":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"100 MHz Random Number Generator Design Using Interleaved Metastable NAND/NOR Latches*\",\"authors\":\"Chua-Chin Wang, S. Lu\",\"doi\":\"10.1109/APCCAS50809.2020.9301684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This investigation demonstrates a wide bandwidth random number generator (RNG) based on interleaved NAND-/NOR-based SR (set-reset) latches. More specifically, the metastability of SR latches driven by the same input causing undefined output states is exploited. To achieve higher irregular sampling of the SR latches, not only NAND-based SR latches and NOR-based SR latches are interleaved integrated, their inputs are also randomly selected by another array of metastable SR latches. Namely, a 2-layer RNG architecture is realized to avoid locking phenomenon and enhance randomness. The proposed 2-layer RNG is realized using typical 40-nm CMOS process. All-PTV-corner (process, temperature, voltage) post-layout simulations validate that the proposed RNG passes long run test and mono-bit test given 100 MHz clock rate.\",\"PeriodicalId\":127075,\"journal\":{\"name\":\"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS50809.2020.9301684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS50809.2020.9301684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
100 MHz Random Number Generator Design Using Interleaved Metastable NAND/NOR Latches*
This investigation demonstrates a wide bandwidth random number generator (RNG) based on interleaved NAND-/NOR-based SR (set-reset) latches. More specifically, the metastability of SR latches driven by the same input causing undefined output states is exploited. To achieve higher irregular sampling of the SR latches, not only NAND-based SR latches and NOR-based SR latches are interleaved integrated, their inputs are also randomly selected by another array of metastable SR latches. Namely, a 2-layer RNG architecture is realized to avoid locking phenomenon and enhance randomness. The proposed 2-layer RNG is realized using typical 40-nm CMOS process. All-PTV-corner (process, temperature, voltage) post-layout simulations validate that the proposed RNG passes long run test and mono-bit test given 100 MHz clock rate.