用于3D系统集成的W2W永久堆叠

2014 IEEE 16th Electronics Packaging Technology Conference (EPTC) Pub Date : 2014-12-01 DOI:10.1109/EPTC.2014.7028287

Lan Peng, Soon-Wook Kim, Mike Soules, M. Gabriel, M. Zoberbier, E. Sleeckx, H. Struyf, Andy Miller, E. Beyne

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引用次数: 14

摘要

在本文中，我们介绍了用于高密度3D互连应用的300mm晶圆对晶圆(W2W)氧化物键合的进展。开发了一种与CMOS兼容的低温氧化键合方法，该方法可产生一致的无空洞键合。此外，亚微米级的W2W对准精度已经通过使用集成的永久键合平台的独立测试材料进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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W2W permanent stacking for 3D system integration

In this paper, we present advances in 300mm wafer-to-wafer (W2W) oxide-oxide bonding for high density 3D interconnect application. A CMOS compatible low temperature oxide-oxide bonding method has been developed which yields consistent void-free bonding. In addition, sub-micron W2W alignment accuracy has been demonstrated with standalone test materials using an integrated permanent bonding platform.

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2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)

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