高速量子阱激光器中载流子输运的蒙特卡罗模拟

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1900-01-01 DOI:10.1109/EDMO.1995.493693

G. Crow, R. Abram

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引用次数: 0

摘要

为了了解皮秒载流子动力学对调制带宽的影响，建立了多量子阱激光器载流子输运的自一致系综蒙特卡罗计算方法。该模型已应用于设计为1.55 /spl mu/m的基于InP的系统。该装置由3口无应变的80 /spl的Aring/ InGaAs井组成，井的边界是700 /spl的Aring/宽的未分级InGaAsP (1.25 /spl mu/m)约束屏障。讨论了在固定偏置下进行的模拟结果，并从调制偏置模拟中导出了频率响应。

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Monte Carlo simulations of carrier transport in high speed quantum well lasers

A self-consistent ensemble Monte Carlo calculation of carrier transport in a multiple quantum well laser has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to an InP based system designed to emit at 1.55 /spl mu/m. The device consists of three unstrained 80 /spl Aring/ InGaAs wells bounded by 700 /spl Aring/ wide ungraded InGaAsP (1.25 /spl mu/m) confinement barriers. Results from simulations carried out at fixed bias are discussed, and the frequency response has been derived from a modulated bias simulation.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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