热激发退极化电流——半导体封装用多层介电堆的表征

R. Schaller, F. Maier, R. Mandl
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引用次数: 0

摘要

本文介绍了热激去极化电流(TSDC)的测量结果,该测量结果是对半导体封装中典型的堆叠介质层的复杂系统的测量。单独给出了各个隔离层的特性,并将结果与堆栈进行了比较。所研究的层由聚酰亚胺膜、无碱玻璃、聚烯烃膜和环氧基模化合物组成。在19 - 195°C的温度范围内对每种材料在不同的极化场下进行了测量。可以观察到材料内部不同极化机制产生的各种弛豫峰。给出了层堆叠和单个材料的tsdc峰之间的比较。我们的结果表明,超定位光谱正在被一个单一的部分所主导,即模具化合物。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermally stimulated depolarization current - characterization of a multi-layer dielectric stack for semiconductor packages
In this paper, the results of Thermally Stimulated Depolarization Currents (TSDC)-measurements of a complex system of stacked dielectric layers, like typically appearing in semiconductor packages, is presented. Characteristics of the individual isolation layers are presented solely and the results are compared to the stack. The investigated layers are comprising polyimide film, alkali-free glass, polyolefin film and epoxy based mold compound. Measurements have been carried out in the temperature range from 19 - 195°C at varying polarization fields for every material. Various relaxation peaks, originated by different polarization mechanisms within the materials could be observed. A comparison between the TSDC-peaks of the layer stack and the individual materials is shown. Our results demonstrate, that the super positioned spectrum is getting dominated by a single portion, the mold compound.
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