碳化硅场效应管关断能量测量方法的比较

P. Górecki, K. Górecki, J. Rąbkowski
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引用次数: 0

摘要

本文介绍了在碳化硅场效应管的关断能量测量领域的研究结果。新的测量方法,称为热法,是基于被测晶体管的热特性,并与必要的测量设置一起显示。给出了实验结果,并与数据表和使用示波器和高带宽探头采用标准方法得到的结果进行了比较。对调查结果进行了讨论,并指出了所考虑的方法的局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of methods for measuring the turn-off energy of SiC FETs
The paper presents the results of investigations in the area of measurements of the turn-off energy of SiC FETs. The new measurement method, called a thermal method, is based on thermal properties of the tested transistors and it is shown together with the necessary measurement setup. The obtained experimental results are presented and compared with the datasheet and the results obtained using the standard method using oscilloscope and high-bandwidth probes. The investigation results are discussed and the limitations of the considered methods are indicated.
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