宽AlGaAs势垒的蒙特卡罗模拟

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303119

R. Mills, G. Dunn, A. Walker, M. Daniels, P. Bishop, K. O. Jensen, B. Ridley, D. Herbert, J. Jefferson

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引用次数: 0

摘要

本文从理论上研究了掺杂量为1/ sp1倍/10/sup / 18/ cm/sup -3/的砷化镓接触层之间的梯度界面在宽AlGaAs势垒上的电子传递。漂移扩散理论在100- 200k温度范围内与实验电流-电压曲线非常吻合。我们还提出了一个完全自一致的一维蒙特卡罗模拟，其中渐变界面中合金成分的变化是由位置依赖散射来解释的。我们提出了一种在蒙特卡罗模拟中使用的方法，该方法允许对重掺杂接触区域进行建模，即使电子密度在器件中可以变化多达8个数量级。

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Monte Carlo simulation of wide AlGaAs barriers

An theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces between GaAs contact layers doped at 1/spl times/10/sup 18/ cm/sup -3/. Drift diffusion theory has been used giving excellent agreement with experimental current-voltage curves over the temperature range 100-200 K. We also present a fully self consistent 1-D Monte Carlo simulation in which the change in alloy composition in the graded interfaces is accounted for by position dependent scattering. We present a method used in the Monte Carlo simulation which allowed the modelling of the heavily doped contact regions even though the electron density could change by up to 8 orders of magnitude in the device.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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