{"title":"准静态和硬开关应力作用下AlGaN/GaN肖特基二极管的动态电阻监测","authors":"M. Alam, H. Morel, L. Phung, D. Planson, A. Yvon","doi":"10.1109/CAS56377.2022.9934143","DOIUrl":null,"url":null,"abstract":"The development of gallium nitride (GaN) components is one of the most noticeable advances in power electronics and for high-frequency applications. Nevertheless, GaN components are not yet totally reliable, mainly because of the trapping phenomenon which affects the static characteristics of GaN components, including the on-state resistance. Dynamic resistance degradation studies have been carried out, for quasi-static and hard switching (Double Source Test: DST) stresses. The results show the influence of the reverse stress voltage and hard switching on the characteristics of the AlGaN/GaN Schottky diodes.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses\",\"authors\":\"M. Alam, H. Morel, L. Phung, D. Planson, A. Yvon\",\"doi\":\"10.1109/CAS56377.2022.9934143\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of gallium nitride (GaN) components is one of the most noticeable advances in power electronics and for high-frequency applications. Nevertheless, GaN components are not yet totally reliable, mainly because of the trapping phenomenon which affects the static characteristics of GaN components, including the on-state resistance. Dynamic resistance degradation studies have been carried out, for quasi-static and hard switching (Double Source Test: DST) stresses. The results show the influence of the reverse stress voltage and hard switching on the characteristics of the AlGaN/GaN Schottky diodes.\",\"PeriodicalId\":380138,\"journal\":{\"name\":\"2022 International Semiconductor Conference (CAS)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAS56377.2022.9934143\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS56377.2022.9934143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses
The development of gallium nitride (GaN) components is one of the most noticeable advances in power electronics and for high-frequency applications. Nevertheless, GaN components are not yet totally reliable, mainly because of the trapping phenomenon which affects the static characteristics of GaN components, including the on-state resistance. Dynamic resistance degradation studies have been carried out, for quasi-static and hard switching (Double Source Test: DST) stresses. The results show the influence of the reverse stress voltage and hard switching on the characteristics of the AlGaN/GaN Schottky diodes.
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