毫米波到太赫兹波段的片上探测新方法

M. J. H. Larsen, E. Brown
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引用次数: 2

摘要

太赫兹器件和集成电路发展的一个较大障碍是它们在100ghz以上的上毫米到太赫兹范围内的电气特性。今天的技术主要是基于金属对金属,直流耦合接触探头。然而,这项技术既昂贵又脆弱,而且很难扩展到更高的频率。本文讨论的是通过极化电流而不是传导电流耦合到被测器件或电路的无接触探头。在1.0 THz范围内进行了数值模拟,发现探头耦合在-26 dB左右,带宽至少为500 GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new approach to on-chip probing in the MM-wave to THz range
One of the bigger obstacles in the development of THz devices and integrated circuits is their electrical characterization in the upper-millimeter to terahertz range above 100 GHz. Today's technology is mainly based on metal-to-metal, dc-coupled contact probes. This technology is, however, expensive and fragile, and is difficult to scale to higher frequencies. This paper concerns contact-free probes that are (ac) coupled to the device or circuit-under-test by the polarization current rather than the conduction current. Numerical simulations are carried out to 1.0 THz and the probe coupling is found to be around -26 dB, with a bandwidth of at least 500 GHz.
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