{"title":"双阈值独立栅n型tfet","authors":"Jiafeng Wang, Jianping Hu, Wenjing Bai","doi":"10.1109/NANO.2018.8626337","DOIUrl":null,"url":null,"abstract":"In this paper, we introduce novel dual-threshold (DT) independent gate (IG) N-type Tunneling Field-effect Transistor (TFET) devices that can reduce the number of transistors used in circuit designs. We optimize the leakage currents by varying gate-on-drain overlapping based on typical symmetrical dual-gate structures, and then achieve high-Vth and low-Vth IG transistors by adjusting gate work function. TCAD simulation results show high-Vth and low-Vth IG N-type TFETs are logically equivalent to two short-gate (SG) transistors in series and parallel, respectively, with excellent electrical characteristics.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Dual-threshold independent-gate N-type TFETs\",\"authors\":\"Jiafeng Wang, Jianping Hu, Wenjing Bai\",\"doi\":\"10.1109/NANO.2018.8626337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we introduce novel dual-threshold (DT) independent gate (IG) N-type Tunneling Field-effect Transistor (TFET) devices that can reduce the number of transistors used in circuit designs. We optimize the leakage currents by varying gate-on-drain overlapping based on typical symmetrical dual-gate structures, and then achieve high-Vth and low-Vth IG transistors by adjusting gate work function. TCAD simulation results show high-Vth and low-Vth IG N-type TFETs are logically equivalent to two short-gate (SG) transistors in series and parallel, respectively, with excellent electrical characteristics.\",\"PeriodicalId\":425521,\"journal\":{\"name\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2018.8626337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2018.8626337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, we introduce novel dual-threshold (DT) independent gate (IG) N-type Tunneling Field-effect Transistor (TFET) devices that can reduce the number of transistors used in circuit designs. We optimize the leakage currents by varying gate-on-drain overlapping based on typical symmetrical dual-gate structures, and then achieve high-Vth and low-Vth IG transistors by adjusting gate work function. TCAD simulation results show high-Vth and low-Vth IG N-type TFETs are logically equivalent to two short-gate (SG) transistors in series and parallel, respectively, with excellent electrical characteristics.
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