用于测量两种金属之间接触电阻的垂直测试结构

Proceedings of the 1991 International Conference on Microelectronic Test Structures Pub Date : 1990-03-18 DOI:10.1109/ICMTS.1990.161708

S. Ido, M. Imai, T. Kumise, M. Satoh, H. Horir, S. Ando

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引用次数: 3

摘要

为测量两种金属之间的接触电阻，研制了一种垂直测试结构。利用该结构测量了Al/TiN/AlSi与大量掺As/sup +/掺杂的n/sup +/-多晶硅之间的接触电阻。测试发现，该结构可以抑制接触孔中不均匀的电流密度，并提供更精确的接触电阻。此外，对大接触窗的测量数据进行外推，可以得到小接触窗的R/sub c/。

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The vertical test structure for measuring contact resistance between two kinds of metal

A vertical test structure was developed for measuring the contact resistance between two kinds of metal. The contact resistance between Al/TiN/AlSi and heavily As/sup +/-doped n/sup +/-poly Si was measured using this structure. The test structure was found to suppress nonuniform current density in the contact hole and to provide more accurate contact resistances. In addition, the R/sub c/ of a small contact window could be obtained from the extrapolation of the measurement data found for large contact windows.<>

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Proceedings of the 1991 International Conference on Microelectronic Test Structures

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