肖特基结晶体管的l/f噪声特性:一种超低功耗、抗辐射亚阈值MESFET

2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Pub Date : 2004-03-13 DOI:10.1109/AERO.2004.4620172

R.J. Anderson, J. Spann, J. Yang, T. Thornton

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引用次数: 1

摘要

本文研究了一种新型亚阈值器件结构肖特基结晶体管(SJT)的1/f噪声特性。两个mum栅极长度的sjt的结果证实了预期的亚阈值直流行为。给出了漏极电流噪声功率谱和栅极参考噪声功率谱的室温测量结果。虽然原型sjt仍未优化，但表现出良好的低频1/f噪声特性

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The l/f noise characteristics of a Schottky Junction Transistor: an ultra-low power, radiation hardened sub-threshold MESFET

This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky junction transistor (SJT). Results from 2 mum gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics

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2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720)

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