{"title":"LightMOS是一种专门用于灯镇流器应用的新型功率半导体概念","authors":"E. Griebl, L. Lorenz, M. Purschel","doi":"10.1109/IAS.2003.1257610","DOIUrl":null,"url":null,"abstract":"With the monolithic integration of a body diode into an IGBT structure, a very cost attractive solution for the lamp ballast application is introduced. Using the trench stop technology for lowest tail currents, switching losses and the overall power losses of the device are in the range of the latest MOSFET technologies using the compensation principle for lowest on state resistances.","PeriodicalId":288109,"journal":{"name":"38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"LightMOS a new power semiconductor concept dedicated for lamp ballast application\",\"authors\":\"E. Griebl, L. Lorenz, M. Purschel\",\"doi\":\"10.1109/IAS.2003.1257610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the monolithic integration of a body diode into an IGBT structure, a very cost attractive solution for the lamp ballast application is introduced. Using the trench stop technology for lowest tail currents, switching losses and the overall power losses of the device are in the range of the latest MOSFET technologies using the compensation principle for lowest on state resistances.\",\"PeriodicalId\":288109,\"journal\":{\"name\":\"38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003.\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.2003.1257610\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.2003.1257610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
LightMOS a new power semiconductor concept dedicated for lamp ballast application
With the monolithic integration of a body diode into an IGBT structure, a very cost attractive solution for the lamp ballast application is introduced. Using the trench stop technology for lowest tail currents, switching losses and the overall power losses of the device are in the range of the latest MOSFET technologies using the compensation principle for lowest on state resistances.