硅射频功率MOS技术的进展-当前和未来趋势

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004069

M. M. De Souza, G. Cao, E. M. Sankara Narayanan, F. Youming, S. K. Manhas, J. Luo, N. Moguilnaia

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引用次数: 15

摘要

本文综述了硅射频功率器件技术的发展现状及影响器件性能的因素。硅vdmosfet具有高线性度，但在超过1ghz的频率下增益较低。ldmosfet具有更高的增益，工作频率可达2.4 GHz。然而，与vdmosfet相比，ldmosfet的线性度和可靠性较差。讨论了新的体系结构和发展趋势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Progress in silicon RF Power MOS technologies - current and future trends

In this paper, the current progress and factors limiting the performance of silicon RF Power device technologies are reviewed. Silicon VDMOSFETs have high linearity but the gain is low at frequencies in excess of 1 GHz. LDMOSFETs have higher gain and can operate up to 2.4 GHz. However, the linearity and reliability of LDMOSFETs is poor in comparison to VDMOSFETs. New architectures and evolving trends are discussed.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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